Si + SiO2
Type: Substrate show more
ObjectId: 12867
Created: 7/17/2023 7:50:15 PM by Dudarev Victor gmail [vic.dudarev@gmail.com]
Access: Public Sort Code (asc): 0
Description:
[no file attached]
Referenced Objects (Reverse Association)
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10012 Ta/TiNiCu 150 nm with bias
Sample -
10017 Ta/TiNiCu 600 nm with bias
Sample -
10018 Ta/TiNiCu 800 nm with bias
Sample -
10021 Ta/TiNiCu 1000 nm with bias
Sample -
10671 241108-K3-1
SampleLa-Co-V-O hot deposition 500°C on Si/SiO2 with Pt-electrode layer (50nm Pt on 10nm Ta, 240731-K7-1), La2O3: RF, 200W, 20W/min ramp, Ni: 70W, pulsed DC, 350kHz, 1.4µs, Co: DCXS-750, 70W, preanneal 1h
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11117 TiNiCu K1 Anneal
Sample -
8561 Ti-Ni-Cu
SampleSample for (Ti-Ni-Cu at Si + SiO2, ID=0008561, K2) by Savan Alan.
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11117 TiNiCu K1 Anneal_2
SampleAnnealed at 600°C, 2 h
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10013 Ta/TiNiCu 300 nm with bias
Sample
All properties (except table)
No properties found